Consolidate the leading position of Western Digital and successfully develop the fifth generation 3D NAND technology.

ByLeigha Barre 2020-02-12 1805

[gearbest News] Western Digital announced on Feb. 10 that it has successfully developed the fifth generation 3D NAND technology, "BiCS5." It is understood that BiCS5 is based on TLC and QLC technology. Western Digital significantly increases the array density of horizontal wafer units by adopting new technology and innovative manufacturing processes, second-generation multi-layer storage hole technology, improved manufacturing processes, and other enhanced functions of 3D NAND units. These "scale-out" technologies, combined with 112-layer vertical storage capacity, enable BiCS5 to increase its storage capacity per wafer by 40 per cent compared to Western Digital's previous generation of 96-layer BiCS4 technology.


The new design improvements also improve performance, resulting in a 50% improvement in BiCS5's Imax O performance compared to BiCS4. Relying on BiCS5 technology, Western Digital will launch a full range of personal electronic products, smart phones, IoT devices and data centers based on 3D NAND technology. BiCS5 TLC, Western Digital based on 512 Gb has successfully achieved mass production in consumer products. It is expected that BiCS5 will be put into mass production in the second half of 2020, and BiCS5 will become a more ideal choice in the areas of car networking, mobile devices and artificial intelligence.

Steve Paak, Senior Vice President, Storage Technology and Manufacturing at Western Digital, said, "as another decade approaches, a new 3D NAND evolution is critical to continue to meet the growing data volumes and performance needs. The successful production of BiCS5 reflects Western Digital's continued leadership in flash technology and its efficient implementation of long-term road signs. By using multi-tier storage hole technology to increase storage density and increase the number of layers of storage, we have significantly improved the capacity and performance of 3D NAND, thus continuously meeting the high reliability and low cost that users expect. "


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